文章正文
Ti:Sapphire
Summary:
Ti:Sapphire
NewDistrict supplies high quality Ti:Sapphire by the advanced growth method of Temperature Gradient Technique (TGT), Ti:Sapphire is an excellent substitute for dye lasers in many applications. By harmonics using NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV laser sources with ultrafast pulses below 10fs.
Capabilities
1. Dopant conentration: 0.06-0.5 wt%
2. Figure of Merit: 100~300
3. Diameter: 2~50mm
4. Path Length: 2~130mm
5. End configuration: flat or Brewster or Specified
6. Orientation: Optical axis C normal to rod axis within 2 degrees
Specifications:
Dopant Concentration Tolerance: 0.1%
Parallelism: <10 arc seconds
Perpendicularity: <5 arc minutes
Chamfer: 0.1mm @45°
Clear Aperture: 95%
Surface Quality: 10/5
Surface Flatness: <λ/8 at 633nm
Wavefront Distortion: λ/10 @ 633nm
Damage Threshold: over 15J/CM2 TEM00, 10NS, 10HZ
NewDistrict supplies high quality Ti:Sapphire by the advanced growth method of Temperature Gradient Technique (TGT), Ti:Sapphire is an excellent substitute for dye lasers in many applications. By harmonics using NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV laser sources with ultrafast pulses below 10fs.
Capabilities
1. Dopant conentration: 0.06-0.5 wt%
2. Figure of Merit: 100~300
3. Diameter: 2~50mm
4. Path Length: 2~130mm
5. End configuration: flat or Brewster or Specified
6. Orientation: Optical axis C normal to rod axis within 2 degrees
Specifications:
Dopant Concentration Tolerance: 0.1%
Parallelism: <10 arc seconds
Perpendicularity: <5 arc minutes
Chamfer: 0.1mm @45°
Clear Aperture: 95%
Surface Quality: 10/5
Surface Flatness: <λ/8 at 633nm
Wavefront Distortion: λ/10 @ 633nm
Damage Threshold: over 15J/CM2 TEM00, 10NS, 10HZ
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